The ISL73040SEHEV4Z evaluation board demonstrates how to build a half bridge power stage with the ISL73040SEH low-side GaN driver and the ISL73024SEH 200V GaN FET. The ISL73040SEH has a 4.5V gate drive voltage (VDRV) generated using an internal regulator that prevents the gate voltage from exceeding the maximum gate-source rating of the ISL73024SEH GaN FET. The ISL73024SEH is a 200V GaN FET capable of 7.5A drain current.

特性

  • Single PWM input to drive a half bridge configuration
  • Adjustable dead time control
  • Wide openings to support various inductor footprints
  • >95% peak efficiency with high switching frequencies
  • Enable/Disable functions

应用

  • Flyback and forward converters
  • Boost and PFC converters
  • Secondary synchronous FET drivers

文档和下载

文档标题 其他语言 类型 文档格式 文件大小 日期
数据手册与勘误表
ISL70040SEH, ISL73040SEH Datasheet – 数据手册 PDF 1.08 MB
使用指南与说明
ISL73040SEHEV4Z User Guide – 手册 PDF 1.02 MB
应用指南 &白皮书
AN9867: End of Life Derating: A Necessity or Overkill – 应用文档 PDF 338 KB
下载
ISL70040SEH, ISL73040SEH PSPICE Model – 模型 ZIP 13 KB
其他
ISL73040SEHEV4Z Design Files – Design File ZIP 927 KB
ISL73040SEH Total Dose Test Report – 报告 PDF 349 KB
ISL70040SEH, ISL73040SEH SEE Test Report – 报告 PDF 251 KB
info: For device-specific or order-specific documentation, submit a support request.

相关产品

Product ID 文档标题
ISL73024SEH 200V, 7.5A Enhancement Mode GaN Power Transistors
ISL73040SEH Radiation Hardened Low Side GaN FET Driver