The ISL73040SEHEV4Z evaluation board demonstrates how to build a half bridge power stage with the ISL73040SEH low-side GaN driver and the ISL73024SEH 200V GaN FET. The ISL73040SEH has a 4.5V gate drive voltage (VDRV) generated using an internal regulator that prevents the gate voltage from exceeding the maximum gate-source rating of the ISL73024SEH GaN FET. The ISL73024SEH is a 200V GaN FET capable of 7.5A drain current.


  • Single PWM input to drive a half bridge configuration
  • Adjustable dead time control
  • Wide openings to support various inductor footprints
  • >95% peak efficiency with high switching frequencies
  • Enable/Disable functions


  • Flyback and forward converters
  • Boost and PFC converters
  • Secondary synchronous FET drivers


文档标题 其他语言 类型 文档格式 文件大小 日期
ISL70040SEH, ISL73040SEH Datasheet 数据手册 PDF 1.08 MB
ISL73040SEHEV4Z User Guide 手册 PDF 1.02 MB
应用指南 &白皮书
AN9867: End of Life Derating: A Necessity or Overkill 应用文档 PDF 338 KB
ISL70040SEH, ISL73040SEH PSPICE Model 模型 ZIP 13 KB
ISL73040SEHEV4Z Design Files Design File ZIP 927 KB
ISL73040SEH Total Dose Test Report 报告 PDF 349 KB
ISL70040SEH, ISL73040SEH SEE Test Report 报告 PDF 251 KB